Process and gas mixture for etching aluminum

Details Process and gas mixture for etching aluminum Process and gas mixture for etching aluminum

1981-11-02

1983-04-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 1566591, 156345, 204192E, 252 791, C23F 102

Patent

active

043804888

ABSTRACT:
Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.

REFERENCES:
patent: 4178877 (1979-12-01), Kudo
patent: 4182646 (1980-01-01), Zajac
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4267013 (1981-05-01), Iida et al.
patent: 4299680 (1981-11-01), Fontana et al.
patent: 4308089 (1981-12-01), Iida et al.
patent: 4352724 (1982-10-01), Sugishima et al.

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