Process and gas for treatment of semiconductor devices

Details Process and gas for treatment of semiconductor devices Process and gas for treatment of semiconductor devices

1977-11-11

1981-12-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 156656, 156657, 204192E, 252 791, C23F 102, H01L 21306, C03C 1500, C03C 2506

Patent

active

043034675

ABSTRACT:
Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.

REFERENCES:
patent: 4026742 (1977-05-01), Fujino
patent: 4213818 (1980-07-01), Lemons et al.

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