Process and device for the wet-chemical treatment of silicon

Details Process and device for the wet-chemical treatment of silicon Process and device for the wet-chemical treatment of silicon

2006-08-01

2006-08-01

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Recycling, regenerating, or rejunevating etchant

C216S083000, C216S096000, C216S099000, C438S745000, C438S753000, C252S079100, C252S079200, C252S079300

Reexamination Certificate

active

07083741

ABSTRACT:
A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

REFERENCES:
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patent: 2013830 (1971-10-01), None
English Derwent Abstract AN 1971-650625 corresponding to DE 2 013 830.

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