Process and device for the deposition of an at least...

Details Process and device for the deposition of an at least... Process and device for the deposition of an at least...

2007-01-09

2007-01-09

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C118S716000, C257SE21001

Reexamination Certificate

active

10473222

ABSTRACT:
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

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