Process and device for monitoring the plasma etching of thin lay

Details Process and device for monitoring the plasma etching of thin lay Process and device for monitoring the plasma etching of thin lay

1981-07-22

1982-10-26

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

73 37, 73717, 156643, 156345, 204192E, H01L 21306

Patent

active

043560555

ABSTRACT:
A process and device for plasma etching a thin layer. The process includes the steps of identifying a plateau in gas pressure that occurs slightly before the end of etching and then detecting a pressure variation (increase or decrease) from the plateau pressure. Etching is stopped at a predetermined time interval after the variation following the plateau begins. The device includes one or more pressure sensors and means for determining the plateau and subsequent pressure variation.

REFERENCES:
patent: 4263088 (1981-04-01), Gorin
Hitchman et al, "A Simple . . . Etching" J. of Vacuum Science Techno., vol. 17, No. 6 (11/80) pp. 1378-1381.
Poulsen, "Plasma Etching . . . A Review" J. of Vacuum Science Techno., vol. 14, No. 1 (1/77) pp. 266-274.
Raby, "Mass . . . Etching" J. of Vacuum Science Techno., vol. 15, No. 2 (3/78) pp. 205-208.

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