Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-01
2007-05-01
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S652000
Reexamination Certificate
active
10652520
ABSTRACT:
A process is provided for the selective metallization of 3D structures, particularly for the selective gold-plating of 3D contact structures on wafers, such as contact bumps, which are electrically connected to a bond pad on the wafer via a three-dimensional, mechanically flexible structure in the form of a redistribution layer, for subsequent electrical connection to a carrier element, e.g., a printed circuit board. The process is intended to considerably simplify the process sequence. The metallization of the previously prepared 3D structures on the wafer is carried out electrochemically, under current or potential control, by the structures being partially immersed in an electrolyte with a fixed surface. The electrolyte can be covered with a membrane which is permeable to the corresponding ions, or alternatively a gel electrolyte may be used.
REFERENCES:
patent: 4385102 (1983-05-01), Fitzky et al.
patent: 4975175 (1990-12-01), Karube et al.
patent: 5091062 (1992-02-01), Revell
patent: 5126035 (1992-06-01), Kiesel et al.
patent: 5314765 (1994-05-01), Bates
patent: 5690807 (1997-11-01), Clark et al.
patent: 5859397 (1999-01-01), Ichinose et al.
patent: 5869206 (1999-02-01), Sotomura
patent: 5937320 (1999-08-01), Andricacos et al.
patent: 6720107 (2004-04-01), Holtom et al.
patent: 6764586 (2004-07-01), Fleury
patent: 2001/0013651 (2001-08-01), Nakazawa
patent: 2002/0074238 (2002-06-01), Mayer et al.
patent: 3841621 (1992-06-01), None
patent: 69599388 (1997-10-01), None
patent: 0675674 (1997-07-01), None
patent: 0295914 (1998-12-01), None
patent: 1229154 (2002-08-01), None
patent: 63305532 (1998-12-01), None
patent: 1102650 (1999-01-01), None
patent: 0110832 (2001-04-01), None
patent: 0082735 (1999-11-01), None
patent: 0090469 (2001-10-01), None
Baker & Botts L.L.P.
Dang Phuc T.
Infineon - Technologies AG
LandOfFree
Process and arrangement for the selective metallization of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and arrangement for the selective metallization of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and arrangement for the selective metallization of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3814283