Process and apparatus for post deposition treatment of low...

Details Process and apparatus for post deposition treatment of low... Process and apparatus for post deposition treatment of low...

2011-03-22

2011-03-22

Wells, Nikita (Department: 2881)

Radiant energy

Supported for nonsignalling objects of irradiation

C250S455110, C250S50400H

Reexamination Certificate

active

07910897

ABSTRACT:
Methods and apparatus are provided for processing a substrate with an ultraviolet curing process. In one aspect, the invention provides a method for processing a substrate including depositing a silicon carbide dielectric layer on a substrate surface and curing the silicon carbide dielectric layer with ultra-violet curing radiation. The silicon carbide dielectric layer may comprise a nitrogen containing silicon carbide layer, an oxygen containing silicon carbide layer, or a phenyl containing silicon carbide layer. The silicon carbide dielectric layer may be used as a barrier layer, an etch stop, or as an anti-reflective coating in a damascene formation technique.

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