Process and apparatus for low pressure chemical vapor deposition

Details Process and apparatus for low pressure chemical vapor deposition Process and apparatus for low pressure chemical vapor deposition

1987-09-04

1989-04-04

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118724, 118725, 118726, 118733, C23C 1600

Patent

active

048175579

ABSTRACT:
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.

REFERENCES:
patent: 2602033 (1952-07-01), Lander
patent: 2685124 (1954-08-01), Toulmin, Jr.
patent: 2759848 (1956-08-01), Sullivan
patent: 3219482 (1965-11-01), Jenkin
patent: 3502515 (1970-03-01), McMullen et al.
patent: 3529350 (1970-09-01), Rairden, III
patent: 3619288 (1971-11-01), Sirtl
patent: 3669724 (1972-06-01), Brand
patent: 3669737 (1972-06-01), Brand
patent: 4162345 (1979-07-01), Holzl
patent: 4184448 (1980-01-01), Aichert
patent: 4389973 (1983-06-01), Suntola
patent: 4488506 (1984-12-01), Heinecke
patent: 4503807 (1985-03-01), Nakayama
"Vapor Deposition", Powell et al, John Wiley & Sons, Inc., 1966, pp. 269-276.
"Plasma-Enhanced Deposition of Tungsten, Molybdenum, and Tungsten Silicide Films" by Tang, et al, pp. 125-128, Solid State Technology/Mar. 1983.
"CVD Tungsten Interconnect and Contact Barrier Technology for VLSI" by Miller, et al, pp. 85-90, Solid State Technology/Dec. 1982.

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