Process and apparatus for growing a crystal ribbon

Details Process and apparatus for growing a crystal ribbon Process and apparatus for growing a crystal ribbon

1982-04-23

1984-09-04

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156617V, 156DIG64, 156DIG88, 156DIG98, 422246, 422249, C30B 1534, C01B 3302

Patent

active

044695527

ABSTRACT:
A process and apparatus is disclosed for growing a crystal ribbon (42) of a substance of theoretically infinite length from a melt (32) of the substance. A pair of fixedly positioned edge defining members (44) are partially submerged into the melt (32) so as to break the surface (34) of the melt (32) at a predetermined distance from one another. The edge defining members (44) are wettable by the melt and the predetermined distance substantially corresponds to the width of the crystal ribbon (42) to be grown. The crystal ribbon (42) is grown by contacting the surface (34) of the melt (32) with a seed ribbon (38) between the edge defining members (44) whereby a meniscus (48) of the melt (32) is established on the seed ribbon (38). The meniscus (48) is stabilized by the meniscus (50) of the melt (32) on the edge defining members (44). Pulling the seed crystal ribbon (38) away from the melt (32) results in continuous growth of the crystal ribbon (42).

REFERENCES:
patent: 3015592 (1962-01-01), Leopold
patent: 3198606 (1965-08-01), Lyons
patent: 3265469 (1966-08-01), Hall
patent: 3954551 (1976-05-01), Cecil et al.
patent: 4121965 (1978-10-01), Leipold
patent: 4299648 (1981-11-01), Ciszek et al.
Ciszek, T. F. and Hurd, J. L., "Melt Growth of Silicon Sheets by Edge-Supported Pulling", Solar Energy Research Institute, Nov., 1980.

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