Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-08-24
2009-12-15
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S778000
Reexamination Certificate
active
07632758
ABSTRACT:
An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.
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patent: 6399520 (2002-06-01), Kawakami et al.
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 2001-160555 (2001-06-01), None
patent: 2002-246386 (2002-08-01), None
Japanese Office Action mailed on Aug. 12, 2008 in Japanese Application No. 2003-146228.
Ide Shinji
Kitagawa Junichi
Ozaki Shigenori
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Menz Douglas M
Tokyo Electron Limited
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