Process and apparatus for forming oxide film, and electronic...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S778000

Reexamination Certificate

active

07632758

ABSTRACT:
An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

REFERENCES:
patent: 6358867 (2002-03-01), Tews et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 2001-160555 (2001-06-01), None
patent: 2002-246386 (2002-08-01), None
Japanese Office Action mailed on Aug. 12, 2008 in Japanese Application No. 2003-146228.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process and apparatus for forming oxide film, and electronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and apparatus for forming oxide film, and electronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and apparatus for forming oxide film, and electronic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4060660

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.