Process and apparatus for fabricating a semiconductor device

Details Process and apparatus for fabricating a semiconductor device Process and apparatus for fabricating a semiconductor device

1983-12-15

1984-10-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 501, 118620, 118728, 134 1, 148175, 156345, 156646, 1566591, 156662, 156603, 156612, 156DIG103, 156DIG111, 204192EC, 204192E, 204298, 427 87, 427 93, 427 94, 427307, H01L 21306, H01L 736, B05D 512, C23C 1308

Patent

active

044773110

ABSTRACT:
MOlecular beam epitaxy (MBE) requires that the surface of a substrate on which a semiconductor layer is formed by MBE be clean. Physical etching damages the substrate, while usual chemical etching damages vacuum pumps and contaminates MBE apparatuses. Hydrogen plasma etching can clean a substrate without damaging a substrate and a vacuum pump and without contaminating an MBE apparatus. Further, by combining MBE with formation of a protective layer without breaking the vacuum used in MBE, diffusion of an impurity in the semiconductor layer formed by MBE can be greatly decreased during a subsequent high-temperature heat treatment.

REFERENCES:
patent: 3574014 (1971-04-01), Hugle
patent: 4039357 (1977-08-01), Bachmann et al.
patent: 4181544 (1980-01-01), Cho
patent: 4239584 (1980-12-01), Chang et al.
J. Vac. Sci. Technol., 20(1), Jan. 1982, Hydrogen Plasma Etching of Semiconductors and Their Oxides, R.P.H. Chang et al, pp. 45-50.
J. Vac. Sci. Technol., 20(3), Mar. 1982, Summary Abstract: Hydrogen Plasma Etching of Semiconductors and Their Oxides, R.P.H. Chang et al, pp. 490-491.
IEEE Spectrum, vol. 17, No. 4, Apr. 1980, New York, G. Panish et al. "Molecular Beam Epitaxy", pp. 18-23.

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