Process and apparatus for double-sided chemomechanical polishing

Details Process and apparatus for double-sided chemomechanical polishing Process and apparatus for double-sided chemomechanical polishing

1990-09-04

1992-05-05

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412943, 20412946, 204217, 204224M, 156657, 156662, C25F 330, C25F 700

Patent

active

051104288

ABSTRACT:
Semiconductor wafers, in particular, silicon wafers, with differently poled front and rear sides and high geometrical quality can be fabricated by double-sided polishing if the wafer surfaces are differently polarized during the polishing process. This can be achieved in a simple fashion, in that during polishing, an electric field is set up between the upper and lower polishing plates. This can be accomplished by providing the upper polishing plate between the plate surface and the polishing cloth with a thin conductive layer insulated with respect thereto, on which a voltage can be impressed, while both polishing plates are grounded to the frame.

REFERENCES:
patent: 2965556 (1960-12-01), Damgaard
patent: 3073764 (1963-01-01), Sullivan
patent: 3161576 (1964-12-01), Teichner
patent: 3293162 (1966-12-01), Sullivan
patent: 3436286 (1969-04-01), Lange
patent: 3437543 (1969-04-01), Winings
patent: 4256535 (1981-03-01), Banks
patent: 4588473 (1986-05-01), Hisatomi et al.

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