Procedure for etching of materials at the surface with...

Details Procedure for etching of materials at the surface with... Procedure for etching of materials at the surface with...

2007-07-03

2007-07-03

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S063000, C216S065000, C216S066000, C216S075000, C204S157410, C204S192110, C204S192320, C205S646000, C205S660000

Reexamination Certificate

active

10428269

ABSTRACT:
The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

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