Probing of device elements

Details Probing of device elements Probing of device elements

2005-06-07

2005-06-07

Wilson, Christian (Department: 2824)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000

Reexamination Certificate

active

06902941

ABSTRACT:
A new and improved method for the probing of integrated circuits (ICs) and is particularly suitable for probing various elements of an IC for failure analysis or other electrical testing and/or measurement of the IC. The method includes providing a probe access trench in the IMD (intermetal dielectric) or other substrate adjacent to the circuit element to be tested and then providing direct electrical contact between the test probe and the sidewall of the element through the trench, during the testing process. Such direct electrical contact between the test probe and the sidewall of the element prevents excessively high contact resistance which may otherwise occur in the use of a probing pad between the test probe and the element.

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Matusiewicz et al., THe role of focused ion beams in physical failure analysis,Proc. Inter. Reliability Physics Symp., (Apr. 1991) 167.

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