Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-02
2010-06-15
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S347000, C257S353000
Reexamination Certificate
active
07737489
ABSTRACT:
An electronic device, e.g., a printed transistor device, comprises a substrate, a first conductive layer, a second conductive layer and a semiconductor layer. The substrate has a first platform and a second platform embossing on the surface thereof, and the first and second platforms are separated by a gap whose width is equivalent to the channel length of the transistor. The first and second conductive layers serving as the source and the drain, respectively, of the transistor device are formed on surfaces of the first and second platforms. The semiconductor layer is formed on the surface of the substrate in the gap.
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Chung Chao An
Pei Zing Way
Industrial Technology Research Institute
King Anthony
Picardat Kevin M
WPAT, P.C.
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