Prevention of trench photoresist scum

Details Prevention of trench photoresist scum Prevention of trench photoresist scum

2005-07-20

2010-10-26

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21222, C257SE21253

Reexamination Certificate

active

07820553

ABSTRACT:
Methods of preventing photoresist scum formation for etch processes for patterning material layers of semiconductor device material layers are disclosed. A treatment of N2and O2is used to prevent the formation of photoresist scum. The treatment may be performed in-situ, and may be performed during the etch process, after the etch process, or both. The treatment is particularly beneficial when implemented during the patterning of low dielectric constant material layers, and when used for the formation of isolated via patterns.

REFERENCES:
patent: 6136211 (2000-10-01), Qian et al.
patent: 7352064 (2008-04-01), Fuller et al.
patent: 2002/0081854 (2002-06-01), Morrow et al.
patent: 2003/0114010 (2003-06-01), Jung
patent: 2004/0043337 (2004-03-01), Chen et al.
patent: 2004/0192058 (2004-09-01), Chu et al.
Whitten et al., “General Chemistry”, 1981 Saunders College Publishing, pp. 8-10, 656, 657.
Marriam-Webster's Collegiate Dictionary, 1998, pp. 749.
Wikipedia.org, “Diazene”, printed Oct. 29, 2009.

Affiliated with

Also associated with

Rating

Prevention of trench photoresist scum does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Prevention of trench photoresist scum, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Prevention of trench photoresist scum will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4225519