Prevention of Ta2O5 mim cap shorting in the beol anneal cycles

Details Prevention of Ta2O5 mim cap shorting in the beol anneal cycles Prevention of Ta2O5 mim cap shorting in the beol anneal cycles

2005-09-06

2005-09-06

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C438S253000

Reexamination Certificate

active

06940117

ABSTRACT:
The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passivation layer between the high-k dielectric layer and each of the capacitor's electrodes. The inventive MIM capacitor includes a first conductor; a first passivation layer located atop the first conductor; a high-k dielectric layer located atop the first passivation layer; a second passivation layer located atop the high k dielectric layer; and a second conductor located atop the second passivation layer.

REFERENCES:
patent: 6201276 (2001-03-01), Agarwal et al.
patent: 6271084 (2001-08-01), Tu et al.
patent: 6344964 (2002-02-01), Adler
patent: 6387775 (2002-05-01), Jang et al.
patent: 6426249 (2002-07-01), Geffken et al.
patent: 6638876 (2003-10-01), Levy et al.
patent: 2002/0022331 (2002-02-01), Saran

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