Prevention of parasitic channel in an integrated SOI process

Details Prevention of parasitic channel in an integrated SOI process Prevention of parasitic channel in an integrated SOI process

2004-06-08

2009-06-09

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257SE21112

Reexamination Certificate

active

07544998

ABSTRACT:
A Silicon on Insulator device is disclosed wherein a parasitic channel induced in a thin film portion of the device is prevented from allowing current flow between the source and drain by a Deep N implant directly below the source or drain. The deep N implant prevents a depletion region from being formed, thereby cutting off current flow between the source and the drain that would otherwise occur.

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