Prevention of ground fault interrupts in a semiconductor process

Details Prevention of ground fault interrupts in a semiconductor process Prevention of ground fault interrupts in a semiconductor process

1998-03-06

2000-08-29

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118725, 118723E, 438715, 216 71, C23F 102

Patent

active

061103225

ABSTRACT:
A pedestal heating system provided for heating a pedestal disposed in the processing chamber of a substrate processing system. A pedestal heating system according to the present invention includes: a heater power supply, a transformer, coupled to the heater power supply, a heater element coupled to the transformer, and an RF ground electrode. The transformer is configured to reduce leakage current from the heater element to various elements of the substrate processing system by localizing current leakage loops. The heater element and RF ground electrode are disposed within the pedestal. Preferably, the transformer is simply an isolation transformer. Where an RF energy source is used, such as in a plasma CVD processing system, an EMI filter may be coupled between the transformer and the heater element, or at another point in the power supply chain to prevent feed-through of RF energy to other of the substrate processing system's subsystems, or other sensitive electronic circuitry coupled to the facility's power supply.

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patent: 5630881 (1997-05-01), Ogure et al.
patent: 5660740 (1997-08-01), Komino

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