Prevention of fluorine-induced gate oxide degradation in WSi pol

Details Prevention of fluorine-induced gate oxide degradation in WSi pol Prevention of fluorine-induced gate oxide degradation in WSi pol

1996-01-03

1997-09-16

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257751, 257915, H01L 2976

Patent

active

056683944

ABSTRACT:
A new method of fabricating a polycide gate is described. A gate polysilicon layer is provided a gate oxide layer on the surface of a substrate. A thin conducting diffusion barrier is deposited overlying the gate polysilicon layer. A of tungsten silicide is deposited overlying the thin diffusion barrier layer wherein a reaction gas in the deposition contains fluorine atoms and wherein fluorine atoms are incorporated into the tungsten layer. The gate polysilicon, thin conducting barrier, and tungsten silicide layers are patterned form the polycide gate structures. The wafer is annealed complete formation of the polycide gate structures wherein number of fluorine atoms from the tungsten silicide layer into the gate polysilicon layer are minimized by presence of the thin conducting diffusion barrier layer wherein because the diffusion of the fluorine atoms is the thickness of the gate oxide layer does not This prevents the device from degradation such as voltage shift and saturation current descrease.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
"Underlayer for Polycide Process", IBM Tech. Disc. Bull.; vol. 28, No. 9, pp. 3968-3969; Feb. 1986.
"Direct Evidence of Gate Oxide Thickness Increase in Tungsten Polycide Processes" by S.L. Hsu et al., IEEE Electron Device Letters, vol. 12, No. 11, Nov. 1991, pp. 623-625.

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