Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-04-18
2006-04-18
Everhart, Caridad M. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S729000
Reexamination Certificate
active
07030035
ABSTRACT:
To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.
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Allen Donald G.
Contreras Richard Jule
Feldbaum Michael
Truchetta Dominic Frank
Everhart Caridad M.
Guillot Robert O.
Hitachi Global Storage Technologies - Netherlands B.V.
Intellectual Property Law Offices
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