Prevention of edge stain in silicon wafers by oxygen annealing

Details Prevention of edge stain in silicon wafers by oxygen annealing Prevention of edge stain in silicon wafers by oxygen annealing

1997-01-08

1999-04-13

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

216 55, 216 99, H01L 21322

Patent

active

058939822

ABSTRACT:
A method of preventing edge stain in silicon wafers from the edge polishing step with an alkaline slurry, the method consisting of formation of an oxide layer by an annealing step in the presence of oxygen prior to edge polishing.

REFERENCES:
patent: 5437761 (1995-08-01), Koide

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