Prevention of clogging in CVD apparatus

Details Prevention of clogging in CVD apparatus Prevention of clogging in CVD apparatus

1996-01-30

1998-10-06

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 427555, 118715, H01L 2144

Patent

active

058175750

ABSTRACT:
Plugging of the effluent line of an apparatus comprising CVD chamber is prevented or substantially reduced by injecting a hot gas into the effluent line during processing. In CVD tungsten processing, including preconditioning the reaction chamber, deposition, and cleaning, a hot gas, such as dried air or nitrogen, is injected into the effluent line downstream of the vacuum pump to maintain the temperature of the internal walls of the effluent line below that at which condensation of WOF.sub.4 occurs. In another embodiment, periodic high bursts of a hot gas into the effluent line removes WO.sub.3 deposits proximate the inlet of the downstream wet scrubber.

REFERENCES:
patent: 3901182 (1975-08-01), Chiang
patent: 4657616 (1987-04-01), Benzing et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5647945 (1997-07-01), Matsuse et al.

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