Prevention of abnormal WSi.sub.x oxidation by in-situ amorphous

Details Prevention of abnormal WSi.sub.x oxidation by in-situ amorphous Prevention of abnormal WSi.sub.x oxidation by in-situ amorphous

1996-05-03

1998-09-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438596, 438683, H01L 21285

Patent

active

058044990

ABSTRACT:
A process which prevents abnormal WSi.sub.x oxidation during subsequent LPCVD insulator deposition and gate sidewall oxidation, uses an in-situ deposition of a thin amorphous silicon layer on top of the tungsten silicide as well as the deposition of an amorphous spacer after gate stack patterning, respectively.

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S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" vol. 1, p. 520, 1986.

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