Pretreatment of semiconductor substrate

Details Pretreatment of semiconductor substrate Pretreatment of semiconductor substrate

1995-12-12

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438680, 4272551, 427535, H01L 2144

Patent

active

058343725

ABSTRACT:
A method for pretreating a semiconductor surface, comprising the steps of: placing a titanium nitride substrate in a reaction chamber and subjecting the reaction chamber to vacuum; purging the reaction chamber with an inert gas selected from the group consisting of N.sub.2, Ar and He and evacuating the reaction chamber into 1 mTorr or lower; treating the surface of the titanium nitride substrate with a reaction gas comprising WF; charging a reducing gas and a source gas for deposition material to form a thin film on the titanium nitride substrate, by which the nucleation rate of deposition material and the number of nucleation sites on the substrate can be increased and a thin film with a uniform thickness and high density can be formed on the substrate.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5665640 (1997-09-01), Foster et al.

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