Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1998-11-17
2000-08-08
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427523, 427533, 427255394, C23C 1448, C23C 1402
Patent
active
060999179
ABSTRACT:
A method for modifying an (oxide) material of a substrate surface to a nitride material by radiating reactive ion particles having a certain amount of energy onto the substrate surface is disclosed. The thin film deposited on the surface-modified substrate has improved material properties. In particular, a surface treatment using ion beam is executed on an Al.sub.2 O.sub.3 substrate to initially form an AlN thin film, and then a GaN thin film is deposited on said AlN thin film. From this, it is possible to obtain a high quality GaN thin film having a better material property, compared with a GaN thin film according to the prior art.
REFERENCES:
patent: 5246741 (1993-09-01), Ouhata et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5880485 (1999-03-01), Marx et al.
Krefft, G. B. et al., "Volume expansion and annealing compaction of ion-bombarded single-crystal and polycrystalline .alpha.-AI.sub.2 O.sub.3.sup.a) ", J. Appl. Phys., 49(5), May 1978, pp. 2725-2730.
Byun Dong-Jin
Choi Won-Kook
Jung Hyung-Jin
Koh Seok-Keun
Kum Dong-Hwa
King Roy V.
Korea Institute of Science and Technology
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