Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1995-12-22
1999-06-15
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257415, 257417, 257420, 438 50, 438 53, H01L 2982
Patent
active
059124997
ABSTRACT:
An integrated pressure sensitive transducer incorporating a pressure sensitive structure having a silicon substrate, and at least one monocrystalline silicon diaphragm deformable in a direction perpendicular to the substrate. The diaphragm, which is joined to the substrate at its periphery by means of an etched insulating layer, has a centered insulating stud which bears on the substrate in order to increase the rigidity of the diaphragm. Completing the transducer and for measuring the deformation of the diaphragm is at least one first electrode located in the substrate facing a high deformation region of the diaphragm and remote from the periphery of the diaphragm and the insulating stud, and at least one second electrode facing at least one low deformation region of the diaphragm and in the vicinity of the periphery and/or the insulating stud.
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Delaye Marie-Therese
Diem Bernard
Commissariat a l''Energie Atomique
Saadat Mahshid
Wilson Allan R.
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