Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-08-24
2009-11-24
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S467000, C257S909000, C257S470000, C257SE27006, C438S909000
Reexamination Certificate
active
07622782
ABSTRACT:
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.
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Chu Stanley
Gamage Sisira Kankanam
Kwon Hyon-Jin
Armand Marc
Cantor & Colburn LLP
Fahmy Wael
General Electric Company
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