Pressure sensors and methods of making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S467000, C257S909000, C257S470000, C257SE27006, C438S909000

Reexamination Certificate

active

07622782

ABSTRACT:
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.

REFERENCES:
patent: 4291293 (1981-09-01), Yamada et al.
patent: 4525766 (1985-06-01), Petersen
patent: 4800758 (1989-01-01), Knecht et al.
patent: 4802952 (1989-02-01), Kobori et al.
patent: 5095349 (1992-03-01), Fujii et al.
patent: 5157973 (1992-10-01), Ciminelli
patent: 5231301 (1993-07-01), Peterson et al.
patent: 5273205 (1993-12-01), Ju et al.
patent: 5591679 (1997-01-01), Jakobsen et al.
patent: 5600071 (1997-02-01), Sooriakumar et al.
patent: 6038928 (2000-03-01), Maluf et al.
patent: 6074891 (2000-06-01), Staller
patent: 6406636 (2002-06-01), Vaganov
patent: 6472244 (2002-10-01), Ferrari et al.
patent: 6629465 (2003-10-01), Maluf et al.
patent: 6647794 (2003-11-01), Nelson et al.
patent: 7197939 (2007-04-01), Sakai et al.
patent: 2003/0019299 (2003-01-01), Horie et al.
patent: 2005/0037534 (2005-02-01), Sawyer
patent: 1 359 402 (2003-11-01), None
patent: 1 522 521 (2005-04-01), None
patent: 10-325772 (1998-08-01), None
patent: WO/00/02028 (2000-01-01), None
patent: WO/2004/050546 (2004-06-01), None
International Search Report; PCT/US2006/032858 with an International Filing Date of Aug. 22, 2006.
High Pressure Sensor Based on Fusion Bonding, Birkelund et al., presented at 2001 Joint International Meeting of The Electromechanical Society, Inc. and International Society of Electrochemistry in San Francisco, CA on Sep. 2-7, 2001.
MIL-STD-883E, dated Mar. 14, 1995.

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