Pressure sensor method of fabrication

Details Pressure sensor method of fabrication Pressure sensor method of fabrication

1995-08-21

1997-05-27

Powell, William

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

216 2, 216 33, 216 41, 216 56, 438455, 438978, 438704, H01L 2100

Patent

active

056328540

ABSTRACT:
A pressure sensor (11) and its method of fabrication include etching a V-groove (19) in a first surface (16) of a first substrate (12), bonding a second substrate (24) to the first substrate (12), thinning the second substrate (24) to form a diaphragm (32) overlying the V-groove (19), and etching a port (38) from the second surface (18) of the first substrate (12) to the V-groove (19). Tetra-methyl-ammonium-hydroxide is preferably used to anisotropically etch the V-groove (19), and an anisotropic plasma reactive ion etch is preferably used to etch the port (38).

REFERENCES:
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5095349 (1992-03-01), Fujii et al.
patent: 5295395 (1994-03-01), Hocker et al.
patent: 5316618 (1994-05-01), van Lintel
patent: 5318652 (1994-06-01), Hocker et al.

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