Pressure sensor diagnostics in a process transmitter

Details Pressure sensor diagnostics in a process transmitter Pressure sensor diagnostics in a process transmitter

1996-02-23

1997-09-09

Raevis, Robert

Measuring and testing

Instrument proving or calibrating

Fluid pressure

G01F 138

Patent

active

056658990

ABSTRACT:
A transmitter in a process control system includes diagnostic circuitry for determining condition of a pressure sensor. The pressure sensor includes a pressure responsive structure and a capacitor coupled to the pressure responsive structure whereby capacitance of the capacitor varies in response to process pressure. Measurement circuitry determines capacitance which is transmitted over a process control loop using output circuitry. The diagnostic circuitry is coupled to the pressure sensor and provides a diagnostic input to the pressure sensor. The diagnostic input causes a change in the capacitance which is monitored to determine condition of the pressure sensor.

REFERENCES:
patent: 3405559 (1968-10-01), Moffatt
patent: 3743552 (1973-07-01), Fa
patent: 4084438 (1978-04-01), Lee et al.
patent: 4088799 (1978-05-01), Kurtin
patent: 4196632 (1980-04-01), Sikorra
patent: 4287501 (1981-09-01), Tominaga et al.
patent: 4301492 (1981-11-01), Paquin et al.
patent: 4434665 (1984-03-01), Adolfsson et al.
patent: 4507973 (1985-04-01), Barr et al.
patent: 4542436 (1985-09-01), Carusillo
patent: 4544887 (1985-10-01), Kamieniecki
patent: 4753109 (1988-06-01), Zabler
patent: 4761607 (1988-08-01), Shiragasawa et al.
patent: 4800758 (1989-01-01), Knecht et al.
patent: 4825685 (1989-05-01), Breimesser
patent: 4836011 (1989-06-01), Dombrowski et al.
patent: 4837506 (1989-06-01), Patterson
patent: 4859939 (1989-08-01), Gittleman et al.
patent: 4896525 (1990-01-01), Breimesser
patent: 4972717 (1990-11-01), Southworth et al.
patent: 5155061 (1992-10-01), O'Connor et al.
patent: 5178015 (1993-01-01), Loeppert et al.
patent: 5201228 (1993-04-01), Kojima et al.
patent: 5227068 (1993-07-01), Runyon
patent: 5287724 (1994-02-01), White et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 5349492 (1994-09-01), Kimura et al.
patent: 5377524 (1995-01-01), Wise et al.
patent: 5381300 (1995-01-01), Thomas et al.
patent: 5424650 (1995-06-01), Frick
patent: 5437189 (1995-08-01), Brown et al.
patent: 5445006 (1995-08-01), Allen et al.
patent: 5469735 (1995-11-01), Watanabe
patent: 5471884 (1995-12-01), Czarnocki et al.
L. Shipu, F. Donghui, X. Ning, S. Zhenya and C. Xiaoming, Processing of Advanced Materials, "Surface electrical properties of Ni-implanted sapphire", published by Chapman & Hall, pp. 77-80 (1991).
L. Romana, P. Thevenard, B. Canut, G. Massouras and R. Brenier, Nuclear Instruments and Methods in Physics Research B46, "Phase Formation Study in .alpha.-Al.sub.2 O.sub.3 Implanted With Niobium Ions", published by Elsevier Science Publishers B.V. (North-Holland), pp. 94-97 (1990).
"High-Temperature Healing of Lithographically Introduced Cracks in Sapphire", J. Rodel and A.M. Glaeser, J. Am. Ceram. Soc., vol. 73, No. 3, Mar. 1990, pp. 592-601.
"A Balanced Resonant Pressure Sensor", E. Stemme and G. Stemme, Sensors and Actuators, A21-A23, 1990, pp. 336-341.
"Silicon Microcavities Fabricated with a New Technique", L. Tenerz and B. Hok, Electronics Letters, vol. 22, No. 11, May 22, 1986, pp. 615-616.
"Small sensitive pressure transducer for use at a low temperature", W. Griffioen and G. Frossati, Rev. Sci. Instrum., vol. 56, No. 6, Jun. 1985, pp. 1236-1238.
"Low-Temperature Preparation of Silicon/Silicon Interfaces by the Silicon-to-Silicon Bonding Method", S. Bengtsson and O. Engstrom, J. Electrochem. Soc., vol. 137, No. 7, Jul. 1990, pp. 2297-2303.
"Interface charge control of directly bonded silicon structures", S. Bengtsson and O. Engstrom, J. Appl. Phys., vol. 66, No. 3, Aug. 1, 1989, pp. 1231-1239.
"Wafer bonding for silicon-on-insulator technologies", J.B. Lasky, Appl. Phys. Lett., vol. 48, No. 1, Jan. 1, 1986, pp. 78-80.
"Production of Controlled-Morphology Pore Arrays: Implications and Opportunities", J. Rodel and A.M. Glaeser, J. Am. Ceram. Soc., vol. 70, No. 8, Aug. 1987, pp. C-172 -C-175.
"Fabrication of an Implantable Capacitive Type Pressure Sensor", S. Shoji, T. Nisase, M. Esashi and T. Matsuo, Transducers '87, 1987.
"Creep of Sensor's Elastic Elements: Metals versus Non-metals", K. Bethe, d. Baumgarten and J. Frank, Nova Sensor--Silicon Sensors and Microstructure, 1990, pp. 844-849.
"Silicon-to-silicon direct bonding method", M. Shimbo, K. Furukawa, K. Fukuda and K. Tanzawa, J. Appl. Phys., vol. 60, No. 8, Oct. 15, 1986, pp. 2987-2989.
"Silicon Sensors and Microstructure", J. Brysek, K. Petersen, J. Mallon, Jr., L. Christel, F. Pourahmadi, Nova Sensor, Jun. 1990, pp. 5.4-5.8, 8.21-8.23, 9.9-9.10, 9.13-9.15.

Affiliated with

Also associated with

Rating

Pressure sensor diagnostics in a process transmitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pressure sensor diagnostics in a process transmitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pressure sensor diagnostics in a process transmitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-71555