Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-07-07

1995-04-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054084881

ABSTRACT:
A semiconductor laser device comprising, a first clad layer of the first conductivity type semiconductor crystal deposited on a first electrode layer, an active layer, a second clad layer formed of a semiconductor crystal of a second conductivity type, a current barrier layer having a stripe-like current inlet opening, a second electrode layer formed of a semiconductor crystal of the second conductivity type, and disposed on the current barrier layer and on the electric current inlet opening. A first electrode is formed on the second electrode layer. A second electrode is formed on the bottom surface of the first electrode layer. Between the current barrier layer and the second clad layer is formed a photoelectric current barrier layer formed of a semiconductor crystal of the first conductivity type having a larger band gap than that of the active layer.

REFERENCES:
patent: 4893313 (1990-01-01), Hatakoshi et al.
patent: 5289487 (1994-02-01), Shimada

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