Pressure equalization system for chemical vapor deposition react

Details Pressure equalization system for chemical vapor deposition react Pressure equalization system for chemical vapor deposition react

1999-03-04

2000-07-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

C23C 1600

Patent

active

060866780

ABSTRACT:
A system for equalizing pressure across a gate adapted to selectively block a port connecting a wafer handling chamber to a process chamber of a reactor for depositing an epitaxial layer on a semiconductor wafer positioned in the process chamber. The system comprises a bypass passage connecting the process chamber to the wafer handling chamber for transporting gas between the process chamber and the wafer handling chamber when the gate is blocking the port connecting the wafer handling chamber to the process chamber of the reactor for equalizing pressure between the process chamber and the wafer handling chamber. The system also includes a bypass valve positioned along the bypass passage for selectively controlling gas flow through the bypass passage. The bypass valve has an open position in which gas is permitted to flow through the bypass passage to equalize pressure between the process chamber and the wafer handling chamber and a closed position in which gas is prevented from flowing through the bypass passage to isolate the process chamber from the wafer handling chamber. In addition, the system includes a flow restrictor positioned along the bypass passage for restricting gas flow through the bypass passage to limit pressure change rates in the process chamber and the wafer handling chamber when the bypass valve is in the open position and thereby to limit a maximum velocity of gas flowing through the bypass passage.

REFERENCES:
patent: 4592306 (1986-06-01), Gallego
patent: 5700127 (1997-12-01), Harada
patent: 5766360 (1998-06-01), Sato

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