Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S758000, C257SE21170
Reexamination Certificate
active
10871897
ABSTRACT:
A pressure control system allows gas to be evacuated out of a semiconductor process chamber at a substantially constant rate of mass flow. A gas line connects the process chamber to a vacuum pump. A controllable valve having a variable sized opening is positioned between the process chamber and the vacuum pump. A pressure sensor is in turn positioned between the valve and the vacuum pump, proximate the inlet to the vacuum pump. The size of the variable sized opening is regulated based upon the pressure in the gas line measured by the pressure sensor. The size of the valve opening is varied to maintain the pressure measured by the pressure sensor at a constant value. As a result, because the quantity of gas flowing through the gas line is proportional to the gas pressure, a substantially constant mass flow of gas out of the chamber and into the pump can be achieved.
REFERENCES:
patent: 4910042 (1990-03-01), Hokynar
patent: 5462603 (1995-10-01), Murakami
patent: 5882419 (1999-03-01), Sinha et al.
patent: 6056510 (2000-05-01), Miura et al.
patent: 6071350 (2000-06-01), Jeon et al.
patent: 6119532 (2000-09-01), Park et al.
patent: 6139640 (2000-10-01), Ramos et al.
patent: 6202681 (2001-03-01), Kouketsu et al.
patent: 6289737 (2001-09-01), Kouketsu et al.
patent: 6508268 (2003-01-01), Kouketsu
patent: 6616898 (2003-09-01), Hara et al.
patent: 2005/0180865 (2005-08-01), Heaps et al.
patent: 6266446 (1994-09-01), None
patent: 02000020138 (2000-01-01), None
ASM International N.V.
Ghyka Alexander
Knobbe Martens Olson & Bear LLP
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