Pressure-contact type semiconductor element and power converter

Details Pressure-contact type semiconductor element and power converter Pressure-contact type semiconductor element and power converter

1999-06-18

2000-12-26

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257153, 257138, 257181, 257151, 257150, 257688, H01L 2974, H01L 31111

Patent

active

061664022

ABSTRACT:
A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate conductor 8, and is configured so as to equalize the voltage drop due to self-inductance or mutual inductance between the first circular gate conductor 7, second circular gate conductor 8 and cathode post electrode 4. In this manner it is possible to guarantee more or less uniform parallel inductance over the surface of the element.

REFERENCES:
patent: 5043795 (1991-08-01), Takahashi et al.
patent: 5519253 (1996-05-01), Lake et al.
patent: 5652467 (1997-07-01), Onise et al.
patent: 5739556 (1998-04-01), Bolgaini
patent: 5777351 (1998-07-01), Taguchi et al.
patent: 6072200 (2000-06-01), Gruning et al.

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