Press-contact flat type semiconductor device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 68, 357 71, 357 74, H01L 2342, H01L 2344, H01L 2346, H01L 2348

Patent

active

049582151

ABSTRACT:
A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet to a molybdenum or tungsten disc, assures a uniform press contact because a warp on the silicon pellet is largely reduced in comparison with a conventional device. A silver sheet is omitted between an anode electrode post and the silicon pellet to absorb a warp on the pellet. It is only necessary to insert a molybdenum or tungsten disc there, instead, which is thinner than a counterpart of the conventional device. Between the cathode electrode of the silicon pellet and a cathode electrode post use is made of, in the place of a conventional molybdenum foil and silver cap, an annealed soft copper cap of better malleability and, in the place of conventional molybdenum disc, an inexpensive hard copper sheet of adequate thickness and rigidity, not annealed, which can assure uniform press contact with the cathode electrode surface which oppositely confronts a gate lead connection circuit of a cathode electrode post. Since the silicon pellet is not alloy-bonded to the molybdenum or tungsten disc, it is simple and easy to form a bevelled structure, and to perform a silicone insulating rubber coating operation, so as to obtain the anode-to-cathode withstand voltage of the silicon pellet. Thus an inexpensive press-contact flat type semiconductor device of a long life can be provided which ensures more uniform press contact than a conventional semiconductor device.

REFERENCES:
patent: 3581160 (1971-05-01), Piccone et al.
patent: 4383355 (1983-05-01), Eisele
patent: 4402004 (1983-08-01), Iwasaki
patent: 4426659 (1984-01-01), de Bruyne et al.
patent: 4587550 (1986-05-01), Matsuda
patent: 4694322 (1987-09-01), Sakurai et al.
patent: 4712128 (1987-12-01), Bennett

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Press-contact flat type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Press-contact flat type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Press-contact flat type semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1574920

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.