Preparation process of compound semiconductor

Details Preparation process of compound semiconductor Preparation process of compound semiconductor

1986-09-19

1988-08-30

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 437110, C30B 2502

Patent

active

047674946

ABSTRACT:
A compound semiconductor thin film is formed by growing a plurality of molecular layers one over another. According to the present invention, while a carrier gas and a small quantity of hydride containing an element in Group V or VI are normally flowed, an organometallic compound which is diluted with hydrogen and which contains an element in Group III or II and a hydride which is diluted with hydrogen and which contains an element in Group V or VI are alternately introduced over a substrate so that an atomic layer of an element in Group III or II and an atomic layer of an element in Group V or VI are alternately grown over the substrate. According to this method, grown layers having a high degree of purity can be obtained. A portion such as a Ga-Ga two-layer structure formed in the growth of a surface of an element in Group III or II can easily be eliminated by the introduction of a hydrogen halide so that the surface defects and deep levels are significantly decreased and perfect crystals can be obtained. According to the present invention, a high-concentration doping of a III-V compound semiconductor becomes possible. The method of the present invention is advantageous in the fabrication of high-speed FETs and multi-quantum-well lasers using compound semiconductors.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4193835 (1980-03-01), Inoue et al.
patent: 4404265 (1983-09-01), Manasevit
patent: 4422888 (1983-12-01), Stutius
patent: 4488914 (1984-12-01), Quinlan et al.
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4568397 (1986-02-01), Hoke et al.
Biefeld, R., "The Preparation of InAs.sub.1-x Sb.sub.x Alloys and Strained-Layer Superlattices by MOCVD", J. Crys. Growth 77 (Sep. 86), 392-399, Apr. Conference, 86.
Ohno et al., "Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane` Doping", Jap. J. Appl. Phys., vol. 23, No. 6, 1984, pp. L369-L370.
Kobayashi et al., "Flow-Rate Modulation Epitaxy of GaAs", Japanese Journal of Applied Physics, vol. 24, No. 12, Dec. 1985, pp. L962-L964.
Oyo Buturi, vol. 53, No. 6 (1984), pp. 516-520.
Sakamoto et al., "Phase-Locked Epitaxy Using Rheed Intensity Oscillation", Jap. J. of App. Physics, vol. 23, No. 9 (1984), pp. L657-L659.
L. L. Chang et al, "The Growth of a GaAs-GaAlAs Superlattice", J. Vac. Sci. Technol., vol. 10, No. 1, 1973, pp. 11-16.
M. Ahonen et al, "A Study of ZnTe Films Grown . . . ", Thin Solid Films, 65, 1980, 301-307.
Jun-ichi Nishizawa et al, "Molecular Layer Epitaxy", J. Electrochem. Soc., Solid State Science and Technology, 1985, pp. 1197-2000.
J. P. Duchemin et al, "A New Method for Growing GaAs Epilayers . . . ", J. Electrochem. Soc., Electrochemical Science and Technology, Jul. 1979, pp. 1134-1142.
S. J. Bass et al, "Controlled Doping of Gallium Arsenide . . . ", Inst. Phys. Conf., Ser. No. 33b, 1977, Chapter 1, pp. 1-10.
V. Aebi et al, "Characterization of Organometallic VPE Grown GaAs . . . ", Journal of Crystal Growth 55, 1981, pp. 517-525.
Shigehiko Sasa et al, "Si Atomic-Planar-Doping in GaAs Made . . . ", Japanese Journal of Applied Physics, vol. 24, No. 8, Aug. 1985, pp. L602-L604.

Affiliated with

Also associated with

Rating

Preparation process of compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preparation process of compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preparation process of compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2086381