Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-06-28
2011-06-28
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S522000, C438S530000
Reexamination Certificate
active
07968440
ABSTRACT:
Described herein are processing conditions, techniques, and methods for preparation of ultra-shallow semiconductor junctions. Methods described herein utilize semiconductor surface processing or modification to limit the extent of dopant diffusion under annealing conditions (e.g. temperature ramp rates between 100 and 5000° C./second) previously thought impractical for the preparation of ultra-shallow semiconductor junctions. Also described herein are techniques for preparation of ultra-shallow semiconductor junctions utilizing the presence of a solid interface for control of dopant diffusion and activation.
REFERENCES:
patent: 3959025 (1976-05-01), Polinsky
patent: 4243865 (1981-01-01), Saxena
patent: 5198372 (1993-03-01), Verret
patent: 5429708 (1995-07-01), Linford et al.
patent: 5627090 (1997-05-01), Marukawa et al.
patent: 5731626 (1998-03-01), Eaglesham et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 5976956 (1999-11-01), Gardner et al.
patent: 6043139 (2000-03-01), Eaglesham et al.
patent: 6106898 (2000-08-01), Takamatsu et al.
patent: 6218270 (2001-04-01), Yasunaga
patent: 6537886 (2003-03-01), Lee
patent: 6555451 (2003-04-01), Kub et al.
patent: 6713370 (2004-03-01), Falster
patent: 6762136 (2004-07-01), Bollinger et al.
patent: 6897118 (2005-05-01), Poon et al.
patent: 6921933 (2005-07-01), Umimoto et al.
patent: 6941063 (2005-09-01), Camm et al.
patent: 2001/0002709 (2001-06-01), Wallace et al.
patent: 2002/0139975 (2002-10-01), Lewis et al.
patent: 2003/0054641 (2003-03-01), Binns et al.
patent: 2003/0068866 (2003-04-01), Chen et al.
patent: 2003/0124821 (2003-07-01), Robertson
patent: 2006/0024928 (2006-02-01), Seebauer et al.
patent: 2006/0024934 (2006-02-01), Chan et al.
patent: 2007/0099402 (2007-05-01), Tseng et al.
patent: 2008/0014763 (2008-01-01), Lu et al.
patent: 2010/0276733 (2010-11-01), Li
patent: 06084852 (1994-03-01), None
patent: WO 98/20525 (1998-05-01), None
patent: WO 01/80295 (2001-10-01), None
patent: WO 03/018465 (2003-03-01), None
patent: WO 03/049163 (2003-06-01), None
patent: WO 03/063218 (2003-07-01), None
Baumvol (Dec. 1999) “Atomic Transport During Growth of Ultrathin Dielectrics on Silicon,”Surf. Sci. Rep. 36(1-8):1-166.
Bonasewicz et al. (1982) “Diffusion of Zinc and Oxygen in Nonstoichiometric Zinc Oxide,”Transport in Non-Stoichiometric Compounds. Proceedings of the First International Conference, , pp. 153-174.
Bond, G.C. (1997) “Preparation and Properties of Vanadia/Titania Monolayer Catalysts,”Appl. Catalysis A157:91-103.
Boyes et al. (Feb. 21, 1985) “Cathodoluminescence of Catalyst Crystallites,”Nature313:666-668.
Bracht et al. (Jul. 13, 1998) “Silicon Self-Diffusion in Isotope Heterostructurs,”Phys. Rev. Lett. 81(2):393-396.
Bu et al. (1994) “Surface Chemistry of N2H2on Si(100)-2x1,”Surf. Sci. 311:385-394.
Bush et al. (1994) “The Sodium Promoted Nitridation of Si(100)-2x1 Using N2Molecular Beams,”Surf. Sci. 313:179-187.
Campbell, S.A. (2001)The Science and Engineering of Microelectronic Fabrication, 2nded., New York, Oxford, pp. 16-21,98-122.
Chadi et al. (Oct. 12, 1987) “Stabilities of Single-Layer and Bilayer Steps on Si(001) Surfaces,”Phys. Rev. Lett. 59(15):1691-1694.
Cherif et al. (1991) “Surface Properties of Si(111) 7x7 Upon NH3 Adsorption and Vacuum Annealing,”Surf. Sci. 351:113-120.
Cowern et al. (1997) “Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications,”Mat. Res. Soc. Symp. Proc. 469:265-276.
Cowern et al. (Nov. 5, 1990) “Impurity Diffusion Via an Intermediate Species: The B-Si System,”Phys. Rev. Lett. 65(19):2434-2437.
Current et al. (1993) “Defect Engineering of P+-Junctions by Multiple-Species Ion Implantation,”Nucl. Instrum. Meth. Phys. Res. B74:175-180.
Demond et al. (Feb. 14, 1983) “Study of Si Self-Diffusion by Nuclear Techniques,”Phys. Lett. 93A(19):503-506.
Dev et al. (Nov. 11, 2003) “Mechanism for Coupling Between Properties of Interfaces and Bulk Semiconductors,”Phys. Rev. B68:195311.
Dev et al. (Web Release Apr. 7, 2005) “Band Bending at the Si(100)-Si3N4Interface Studied by Photoreflectance Spectroscopy,”Surf. Sci. 583:80-87.
Dev et al. (2004) “Band Bending at the Si(111)-SiO2Interface Induced by Low-Energy Ion Bombardment,”Surf. Sci. 550:185-191.
Dev et al. (2002) “Measurement of Fermi Pinning at Si-SiO2 Interfaces: Implications for TED Spike Anneals,”Rapid Thermal and Other Short-Time Processing Technologies III(ECS vol. PV-2002-11) :357-362.
Diamant et al. (Web Release Feb. 11, 2003) “Core-Shell Nanoporous Electrode for Dye Sensitized Solar Cells,”J. Phys. Chem. B107:1977-1981.
Downey et al. (1999) “Effects of ‘Fast’ Rapid Thermal Anneals on Sub-keV Boron and BF2Ion Implants,”J. Electronic Mater. 28(12):1340-1343.
Drucker et al. (1991) “Biased Secondary Electron Imaging of Monatomic Surface Steps on Vicinal Si(100) in a UHV STEM,”Ultramicroscopy35:323-328.
Du et al. (May 1990) “Activation Energy Distribution in Temperature-Programmed Desorption: Modeling and Application to the Soot-Oxygen System,”Energy and Fuels4(3):296-302.
Dufour et al. (1994) “Contrasted Behavior of Si(001) and Si(111) Surfaces to NH/sub 3/ Adsorption and Thermal Nitridation: A N 1s and Si 2p Core Level Study with Sychrotron Radiation,”Surf. Sci. 304:33-.
Fahey et al. (Apr. 1989) “Point Defects and Dopant Diffusion in Silicon,”Rev. Mod. Phys. 61(2):289-384.
Fan et al. (May 15, 1990) “Role of Recoil Implanted Oxygen in Determining Boron Diffusion in Silicon,”J. Appl. Phys. 67(10):6135-6140.
Franco et al. (Jul. 28, 1997) “Local Structure of NH2on Si(100)-(2x1) and Its Effect on the Asymmetry of the Si Surface Dimers,”Phys. Rev. Lett. 79(4):673-676.
Frank et al. (1984) “Diffusion in Silicon and Germanium,” In;Diffusion in Crystalline Solids, Murch et al. Eds., Academic Press, New York, pp. 63-142.
Fukami et al. (Jul. 1, 2002) “Effects of Sputtering Atmosphere Oxygen Pressure on Photocatalytic Phenomena in Anatase Films,”Jap. J. Appl. Phys., Part 2 Lett. 41:L794-L796.
Fukata et al. (Aug. 15, 2001) “Vacancy Formation Energy of Silicon Determined by a New Quenching Method,”Jpn. J. Appl. Phys. 40:L854-L856.
Gao et al. (1996) “Thermal Stability and the Role of Oxygen Vacancy Defects in Strong Metal Support Interaction—Pt on Nb-Doped TiO2(100),”Surf. Sci. 365:638-648.
Gossmann et al. (Sep. 11, 1995) Behavior of Intrinsic Si Point Defects During Annealing in Vacuum,Appl. Phys. Lett. 75:1558-1560.
Gratzel, M. (Nov. 15, 2001) “Photoelectrochemical Cells,”Nature414:338-344.
Gunawan et al. (Web Release Oct. 10, 2003) “Parameter Sensitivity Analysis Applied to Modeling Transient Enhanced Diffusion and Activation of Boron in Silicon,”J. Electrochem. Soc. 150(12):G758-G765.
Gunawan et al. (Aug. 2003) “MaximumA PosterioriEstimation of Transient Enhanced Diffusion Energetics,”AIChE J. 49(8):2114-2123.
Haber et al. (1997) “Vanadium Pentoxide I: Structure and Properties,”Appl. Catal. A157:3-22.
Hakala et al. (Mar. 15, 2000) “First-Principles Calculations of Interstitial Boron in Silicon,”Phys. Rev. B61(12):8155-8161.
Hersam et al. (Feb. 12, 2001) “Atomic-Level Study of the Robustness of the Si(100)-2x1:H Surface Following Exposure to Ambient Conditions,”Appl. Phys. Lett. 78(7):886-888.
Hirvonen et al. (Nov. 1, 1979) “Self-Diffusion in Silicon as Probed by the (p,γ) Resonance Broadening Method,”Appl. Phys. Lett. 35(9):703-705.
Hlil et al. (Apr. 15, 1987) “Photoemission Study of Ammonia Dissociation on Si(100) Below 700K,”Phys. Rev. B. 35(11):5913-5916.
Jain et al. (Jun. 1, 2002) “Transient Enhanced Diffusion of Boron in Si,”J. Appl. Ph
Geyer Scott B
Greenlee Sullivan P.C.
The Board of Trustees of the University of Illinois
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