Preparation of silicon nitride powder

Details Preparation of silicon nitride powder Preparation of silicon nitride powder

1977-01-03

1978-10-24

Vertiz, O. R.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C01B 3306

Patent

active

041221559

ABSTRACT:
A gas mixture of silane and ammonia is heated at temperatures between about 600.degree. C and 1000.degree. C producing an amorphous powdery reaction product which, when heated at a calcination temperature of at least 1100.degree. C yields ultrafine Si.sub.3 N.sub.4 powder of high purity.

REFERENCES:
patent: B581564 (1976-03-01), Jacobsen
patent: 3352637 (1967-11-01), Heymer et al.
patent: 3565674 (1971-02-01), Boland et al.
"Vapor Deposited Silicon Nitride Films," J. Electrochem. Soc.: Solid State Science (Dec. 1969), pp. 1737-1740.

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