Preparation of organic layers for oxygen etching

Details Preparation of organic layers for oxygen etching Preparation of organic layers for oxygen etching

1983-12-27

1984-09-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 1566591, 156668, 156643, 204192E, 252 791, B29C 1708, B44C 122, C03C 1500, C03C 2506

Patent

active

044708718

ABSTRACT:
An improved method of etching a layer of organic material on a sustrate by oxygen plasma or oxygen reactive ion etching is disclosed. The surface of the layer is flood exposed with a plasma including a fluorine species for a time sufficient to significantly reduce the etch rate thereof in the oxygen etch. A patterned mask is then formed on the layer and the exposed portion etched. The subject method produces vertical walls in the etch profile with substantially no rounding of the top edge.

REFERENCES:
patent: 4240869 (1980-12-01), Diepers
patent: 4333793 (1982-06-01), Lifshitz et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4430153 (1984-02-01), Gleason et al.
Donohue, Abstract of Paper Given at International Symposia on Plasma Chemistry, Edinburgh, Scotland, 1981.
Ranadive et al., Abstract of Paper Given at Electrochemical Society Spring Meeting, May, 1980.
Dobkin et al., IEEE Device Letters, vol. EDL-2, No. 9, pp. 222-224, Sep., 1981.

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