Preparation of electroless deposition solutions

Details Preparation of electroless deposition solutions Preparation of electroless deposition solutions

2006-08-08

2006-08-08

Klemanski, Helene (Department: 1755)

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

C106S001250, C106S001270, C427S443100, C427S444000

Reexamination Certificate

active

07087104

ABSTRACT:
A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.

REFERENCES:
patent: 3776740 (1973-12-01), Sivertz et al.
patent: 4005229 (1977-01-01), Miller et al.
patent: 4187198 (1980-02-01), Zeblisky
patent: 4574094 (1986-03-01), DeLuca et al.
patent: 4574095 (1986-03-01), Baum et al.
patent: 4780342 (1988-10-01), LeBlanc, Jr.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4894260 (1990-01-01), Kumasaka et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5169680 (1992-12-01), Ting et al.
patent: 5183795 (1993-02-01), Ting et al.
patent: 5240497 (1993-08-01), Shacham et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5619072 (1997-04-01), Mehta
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5824599 (1998-10-01), Shacham-Diamand et al.
patent: 5830805 (1998-11-01), Shacham-Diamand et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 6048445 (2000-04-01), Brain
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6169024 (2001-01-01), Hussein
patent: 6174812 (2001-01-01), Hsiung et al.
patent: 6197364 (2001-03-01), Paunovic et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6207556 (2001-03-01), Hsu
patent: 6258707 (2001-07-01), Uzoh
patent: 6310019 (2001-10-01), Kakizawa et al.
patent: 6316359 (2001-11-01), Simpson
patent: 6342733 (2002-01-01), Hu et al.
patent: 6350687 (2002-02-01), Avazino et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6359328 (2002-03-01), Dubin
patent: 6441492 (2002-08-01), Cunningham
patent: 6471845 (2002-10-01), Dukovic et al.
patent: 6537902 (2003-03-01), Orita
patent: 6605874 (2003-08-01), Leu et al.
patent: 6613664 (2003-09-01), Barth et al.
patent: 6680540 (2004-01-01), Nakano et al.
patent: 6709874 (2004-03-01), Ning
patent: 6878632 (2005-04-01), Nogami et al.
patent: 2001/0030366 (2001-10-01), Nakano et al.
patent: 2001/0055873 (2001-12-01), Watanabe et al.
patent: 2002/0027261 (2002-03-01), Besser et al.
patent: 2002/0079589 (2002-06-01), Gayet et al.
patent: 2003/0113576 (2003-06-01), Chebiam et al.
patent: 2003/0148618 (2003-08-01), Parikh
patent: 2004/0035316 (2004-02-01), Chebiam et al.
patent: 2004/0038073 (2004-02-01), Chebiam et al.
patent: 1022770 (2000-07-01), None
patent: 1022770 (2000-07-01), None
patent: 62-270778 (1987-11-01), None
patent: 11-288940 (2000-07-01), None
patent: PCT/US 01/44791 (2001-11-01), None
patent: PCT/US03/12967 (2003-04-01), None
patent: WO 03/094209 (2003-11-01), None
“Thick Selective Electroless-Plated Cobalt-Nickel Alloy Contacts to CoSi2”; G.E. Georgiou, F. et al. J. Electrochem. Soc., vol. 138, No. 7, Jul. 1991, pp. 2061-2069. © The Electrochemical Society, Inc.
“Encapsulated Copper Interconnection Devices Using Sidewalls Barriers”, Donald S. Gardner et al.; VMIC Conference; Jun. 11-12, 1991, pp. 99-108.
“Planar Copper-Polymide Back End of the Line Interconnections for ULSI Devices”; B. Luther et al. VMIC Conference; Jun. 8-9, 1993, pp. 15-21.
“Electroless plating of copper at a low pH level”, R. Jagannathan et al.: IBM J. Res. Develop. vol. 37. No. 2: Mar. 1993, pp. 117-123.
“Selective Electroless Metal Deposition for Integrated Circuit Fabrication”, Chiu H. Ting et al.; J. Electrochem Soc. vol. 136, No. 2; Feb. 1989, pp. 456-461. The Electrochemical Society, Inc.
“Selective Electroless Metal Deposition for Via Hole Filling in VLSI Mulitlevel Interconnection Structures”; Chiu H. Ting et al.; J. Electrochem Soc. vol. 136, No. 2; Feb. 1989, pp. 462-465. © The Electrochemical Society, Inc.
“Pd/Si plasma immersion ion implantation for selective elctroless copper plating on SiO2”; Kiang et al.; Applied Phys. Lett. 60 (22): Jun. 1, 1992, pp. 2767-2769. The American Institute of Physics.
“Selective electroless Ni deposition on a TiW underlayer for integrated circuit fabrication”; V.M. Dubin et al.; Thin Solid Films, 226 (1993), pp. 87-93, no month.
“Copper Corrosion With and Without Inhibitors”; V. Brusic et al.; J. Electrochem. Soc. vol. 138, No. 8, Aug. 1991, pp. 2253-2259. © The Electrochemical Society, Inc.
“100 nm wide copper lines made by selective electroless deposition”; Yosi Shacham-Diamand; J. Micromech. Microeng. 1 (1991). pp. 66-732, no month.
“A Half-Micron Pitch Cu Interconnection Technology”; Kazuyoshi Ueno et al.; 1995 Symposium on VSLI Technology Digest of Technical Papers. pp. 27-28, no month.
“Electroless Metal Deposition From Aqueous Solutions”, V.V. Sviridov; Minsk Bielorussion State University; 1987. pp. 60-85, no month.
“Passivation of Copper by Silicide Formation In Dilute Silane”, S. Hymes, et al. Conf. Proc. USLI-VII, Materials Research Society ; 1992, pp. 425-431, no month.
“Copper Interconnection with Tungsten Cladding for ULSI”; J.S.H. Cho et al.; ULSI Tech. Symp; 1991; pp. 39-40, no month.
C.J. Sambucetti et al. Electroless Depostion of Thin Alloy Layers for Metal Passivation and Solder Barriers. Aug. 31, 1997, Electromechanical Society Proceedings, vol. 97-27, pp. 336-345, XP001058382.
S.D. Lopatin et al., “Thin Elctroless Barrier for Copper Films”, Proceedings of thje SPIE, SPIE Bellingham, VA, vol. 3508, Sep. 23, 1998, pp. 65-77, XP001058166.
H. Honma and M. Noguchi, “Electroless Cobalt Bath-Life Extension” Dec. 1990. pp. 67-70.
“Electroless Cu for VLSI”; James S.H. Cho et al.; MRS Bulletin/ Jun. 1993, pp. 31-38.
“Electroless Copper Deposition on Metals and Metal Silicides”;Cecilia Y. Mak; MRS Bulletin/ Aug. 1994, pp. 55-62.
“Selective and Blanket Electroless Cu Plating Initiated By Contact Displacement For Deep Submicron Via Contact Filling”; Dubin et al.; VMIC Conf.; Jun. 27-29, 1995, pp. 315-321.
“0.35 um Cu-Filled Via Holes By Blanket Deposited Electroless Copper On Sputtered Seed Layer”; Yosi Shacham-Diamond et al.; VMIC Conf. ; Jun. 27-29, 1995, pp. 334-336.
“Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide”; Shi-Qing Wang; MRS Bulletin/Aug. 1994, pp. 30-40.
“Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing”; S.P. Murarka et al.; MRS Bulletin/Jun. 1993, pp. 46-51.
“Electrochemically Deposited Diffusion Barriers”; M. Paunovic; et al. J. Electrochem, Soc., vol. 141, No. 7; Jul. 1994, pp. 1843-1850. © The Electrochemical Society, Inc.
“Electroless Copper Deposition For Multilevel Metallization”; S.Simon Wong et al.; Mat. Res. Soc. Symp. Proc. vol. 203; 1991 Materials Research Society, pp. 347-356. no month.
Watanabe and Honman, “Direct Elctroless Nickel Plating on Copper Circuits Using DMAB as a Second Reducing Agent” IEMT/IMC Proceedings; pp. 149-153 (1998), no month.
T. Osaka et al., “Preparation of CoB Soft Magnetic Thin Films by Electroless Plating” IEEE Translation Journal on Magnetics in JAPAN, vol. 6, No. 1, Jan. 1991. pp. 85-90.
V.M. Dubin, “Selective electroless Ni depositon onto Pd-activated Si for integrated circuit fabrication”, Thin Solid Films, 226 (1993) pp. 94-98, no month.
Palmans, et al., “Development of an Electroless Copper Deposition Bath for Via Fill Application on TIN Seed Layers”, Conf. Proc. ULSII-X, Materials Research Society, 1995, pp. 87-94, no month available.

Affiliated with

Also associated with

Rating

Preparation of electroless deposition solutions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preparation of electroless deposition solutions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preparation of electroless deposition solutions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3706543