Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-02-01
2005-02-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S758000, C257S310000, C438S197000, C438S200000, C438S240000, C438S261000
Reexamination Certificate
active
06849925
ABSTRACT:
A semiconductor device having a composite dielectric layer, including a semiconductor substrate, alternating sub-layers including a first dielectric material and a second dielectric material on the semiconductor substrate, the sub-layers forming a composite dielectric layer having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, in which one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and the composite dielectric layer includes a reaction product of the high-K dielectric material and the standard-K dielectric material. In one embodiment, the composite dielectric layer includes a substantially uniform layer of the reaction product of the first dielectric material and the second dielectric material.
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Halliyal Arvind
Jeon Joong S.
Ngo Minh Van
Ogle Robert B.
Nelms David
Renner , Otto, Boisselle & Sklar, LLP
Tran Long
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