Preimplanted N-channel SOI mesa

Details Preimplanted N-channel SOI mesa Preimplanted N-channel SOI mesa

1991-04-15

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 45, 437 46, 437 84, 148DIG150, H01L 21265

Patent

active

051048183

ABSTRACT:
A silicon on insulator circuit having transistors formed in isolated mesas initially doped P.sup.-- has the mesas for N-channel transistors counterdoped to a N.sup.-- concentration, after which a field insulating layer is put down over an outer portion of the N-channel mesas and N-channel transistors with N.sup.+ sources and drains are formed, so that the N.sup.+ areas are adjacent the counterdoped N.sup.-- areas, thereby eliminating P-N junction found in prior art devices.

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