Preferential sputtering of insulators from conductive targets

Details Preferential sputtering of insulators from conductive targets Preferential sputtering of insulators from conductive targets

1994-06-17

1997-07-29

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20429803, 20429808, C23C 1434

Patent

active

056518650

ABSTRACT:
Pulses of positive voltage are applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25-3 microseconds at a pulse rate of about 40-100 KHz. This technique reduces sources for arcing during a reactive sputtering process.

REFERENCES:
patent: 4103324 (1978-07-01), Vandervelden et al.
patent: 4936960 (1990-06-01), Siefkes et al.
patent: 5241152 (1993-08-01), Anderson et al.
patent: 5286360 (1994-02-01), Szczyrbrowski et al.
patent: 5300205 (1994-04-01), Fritsche
patent: 5303139 (1994-04-01), Mark
patent: 5427669 (1995-06-01), Drummond

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