Preferential chemical etch for doped silicon

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566591, 156662, 252 793, 252 794, H01L 21306, B44C 122, C23F 102, C03C 1500

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active

046816577

ABSTRACT:
The present invention provides an improved etchant composition and method for the resistivity specific etching of doped silicon films which overlie intrinsic or lightly doped crystal regions. The composition of the etchant is 0.2-6 mole % hydrofluoric acid, 14-28 mole % nitric acid, and 66-86 mole % acetic acid/water. The etchant leaves no silicon residue and provides for controlled etching with an etch stop at the lightly doped or intrinsic region.

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