Predominantly <100> polycrystalline silicon thin...

Details Predominantly <100> polycrystalline silicon thin... Predominantly <100> polycrystalline silicon thin...

2006-08-08

2006-08-08

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000

Reexamination Certificate

active

07087964

ABSTRACT:
A method is provided to produce thin film transistors (TFTs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. A gate is formed overlying the polycrystalline film. The polycrystalline film is doped to produce source and drain regions.

REFERENCES:
patent: 3821783 (1974-06-01), Sugita et al.
patent: 4654958 (1987-04-01), Baerg et al.
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4773964 (1988-09-01), Haond
patent: 5084410 (1992-01-01), Eguchi et al.
patent: 5177578 (1993-01-01), Kakinoki et al.
patent: 5286673 (1994-02-01), Nishihara
patent: 5485028 (1996-01-01), Takahashi et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 6020224 (2000-02-01), Shimogaichi et al.
patent: 6108464 (2000-08-01), Foresi et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6198132 (2001-03-01), Ishida et al.
patent: 6274888 (2001-08-01), Suzuki et al.
patent: 6478263 (2002-11-01), Yamazaki et al.
patent: 6501095 (2002-12-01), Yamaguchi et al.
patent: 6506669 (2003-01-01), Kuramasu et al.
patent: 6534353 (2003-03-01), Kuramasu et al.
patent: 6569720 (2003-05-01), Kunii
patent: 6653179 (2003-11-01), Minegishi et al.
patent: 6657227 (2003-12-01), Tamura et al.
patent: 6664147 (2003-12-01), Voutsas
patent: 6686978 (2004-02-01), Voutsas
patent: 2002/0117718 (2002-08-01), Voutsas
patent: 2002/0118317 (2002-08-01), Voutsas
patent: 2003/0025134 (2003-02-01), Voutsas
patent: 2003/0064551 (2003-04-01), Voutsas

Affiliated with

Also associated with

Rating

Predominantly <100> polycrystalline silicon thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Predominantly <100> polycrystalline silicon thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Predominantly <100> polycrystalline silicon thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3713828