Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-04-17
2008-10-21
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
With measuring or testing
Reexamination Certificate
active
07439084
ABSTRACT:
A method for determining leakage currents in integrated circuits is provided. The method includes providing a substrate comprising a target structure having a first region and a second region, grounding the second region, scanning the substrate using a scanning electron microscope to produce a voltage contrast (VC) image, determining a gray level of the first region in the VC image, and using the gray level to determine a leakage current between the first region and the second region.
REFERENCES:
patent: 6365423 (2002-04-01), Heinlein et al.
patent: 6815345 (2004-11-01), Zhao et al.
Hiang Tang Kok
Lei Ming-Ta
Lee Calvin
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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