Prediction and control of NBTI of integrated circuits

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Circuit simulation

Reexamination Certificate

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C716S100000

Reexamination Certificate

active

08050901

ABSTRACT:
A modeling system for modeling integrated circuits includes a process variation generator for generating a first statistic distribution of a process parameter; a performance parameter distribution generator for generating a second distribution of a performance parameter; a stress generator for generating a third statistic distribution of the performance parameter under a stress condition; and a circuit simulator for receiving data randomly generated based on the first, the second and the third distributions and for generating a statistic distribution of a target performance parameter.

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patent: 11-110191 (1999-04-01), None
Chen et al. (Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling, IEEE 2002).
Lin, J.C., et al., “Prediction and Control of NBTI—Induced SRAM VccminDrift,” 2006, IEEE, 4 pp.

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