Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-12-05
2006-12-05
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C702S117000
Reexamination Certificate
active
07146588
ABSTRACT:
Systems and methods are disclosed that facilitate predicting electromigration (EM) reliability in semiconductor wafers via decoupling intrinsic and extrinsic components of EM reliability. Electrical cross-sections of wafer test lines can be determined and individual currents can be forced through the test lines to force a constant current density across a test wafer. An EM reliability test can be performed to determine a purely intrinsic component of EM reliability. A single current can then be applied to all test lines and a second EM reliability test can be performed to determine total EM reliability. Standard deviations, or sigma, of failure distributions can be derived for each EM test. Intrinsic sigma can be subtracted from total sigma to yield an extrinsic sigma associated with process variation in wafer fabrication. Sigmas can then be utilized to predict EM reliability when process variations are adjusted, without application of a damaging package-level EM test.
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Erb Darrell
Marathe Amit P.
Amin & Turocy LLP
Whitmore Stacy A
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