Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-07-04
2006-07-04
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S623000, C521S061000
Reexamination Certificate
active
07071125
ABSTRACT:
A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.
REFERENCES:
patent: 6391932 (2002-05-01), Gore et al.
patent: 6599447 (2003-07-01), Stauf et al.
patent: 2002/0173113 (2002-11-01), Todd
Goodner Michael D.
Leet Robert E.
Liou Huey-Chiang
McSwiney Michael L.
Meagley Robert P.
Blakely , Sokoloff, Taylor & Zafman LLP
Dang Phuc T.
Intel Corporation
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