Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2006-10-17
2006-10-17
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255393, C427S255394
Reexamination Certificate
active
07122222
ABSTRACT:
Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:in-line-formulae description="In-line Formulae" end="lead"?[R12N—NH]nSi(R2)4−nin-line-formulae description="In-line Formulae" end="tail"?where each R1is independently selected from alkyl groups of C1to C6; each R2is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
REFERENCES:
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5874368 (1999-02-01), Laxman
patent: 5939333 (1999-08-01), Hurley et al.
patent: 5976991 (1999-11-01), Laxman et al.
patent: 6127287 (2000-10-01), Hurley et al.
patent: 6146938 (2000-11-01), Saida et al.
patent: 6204206 (2001-03-01), Hurley
patent: 6284583 (2001-09-01), Saida et al.
patent: 6350708 (2002-02-01), Hurley
patent: 6365231 (2002-04-01), Sato et al.
patent: 6503557 (2003-01-01), Joret
patent: 6524975 (2003-02-01), Li et al.
patent: 2002/0076947 (2002-06-01), Li et al.
patent: 2003/0215570 (2003-11-01), Seutter et al.
patent: 2005/0048204 (2005-03-01), Dussarrat et al.
patent: 2005/0109276 (2005-05-01), Iyer et al.
patent: 2005/0199945 (2005-09-01), Kodama et al.
patent: 2006/0009041 (2006-01-01), Iyer et al.
patent: 03 006566 (1991-01-01), None
patent: 06132284 (1994-05-01), None
patent: 2000 080476 (2000-03-01), None
G.E. McGuire, Semiconductor Materials and Process Technology Handbook, Noyes Publication, 1988, pp. 289-301.
Stanley Wolf, Silicon Processing for the VLSI Era, Lattice Press, 1990, vol. II, pp. 20-22; 327-331.
Tetsuji Sorita, Mass Spectrometric and Kinetic Study of Low Pressure.., J. Elect. Soc., 1994, vol. 141, pp. 3505-3511.
B.A. Scott, Preparation of Silicon Nitrided with Good Interface Properties.., Chemtronics, 1989, vol. 4, pp. 231-234.
J.M. Grow, Growth Kinetics and Characterization of Low Pressure.., Elsevier Sci., 1995, Mat. Letters 23, pp. 187-193.
W.C. Yeh, Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride.., J. Appl. Phys., 1996, vol. 35, pp. 1509-1512.
Arthur K. Hochberg, Diethylsilane As A Silicon Source for the Deposition.., Mat. Res. Soc. Symp., 1991, vol. 204, pp. 509-514.
Roy G. Gordon, Silicon Dimethylamido Complexes and Ammonia.., Chem. Mater. 1990, 2, pp. 480-482.
Z.I. Sergeeva, Synthesis of Alkyl- and Dialkyl-Bis-(1,1-Dialkylhydrazino)-Silanes, J. Gen. Chem. of USSR, 1960, vol. 30, pp. 716-717.
Z.I. Sergeeva, Reaction of Unsymmetrical and Dialkylhydrazines.., J. Gen. Chem. of USSR, 1963, 33, pp. 1823-1826.
Marcus Soldner, Isomeric Cyclic Disilanedlyl Dimethylhydrazines, Inorg. Chem., 1998, 37, pp. 601-603.
Norbert Mitzel, Two Different Cyclization Modes in the Formation of Silyhydrazines, Organometallics, 1993, 12, pp. 413-416.
Norbert Mitzel, Cyclic Silylhydrazines and Their Borane Adducts, Inorg. Chem., 1995, 34, pp. 4840-4845.
Seiichi Takami, Monolayer Nitridation of Silicon Surfaces by A Dry Chemical.., Appl. Phys. Lett., 1995, 66, (12) pp. 1527-1529.
David R. Lide, Handbook of Chem. and Physics, 81stEdition, 2001, CRC Press, pp. 9-64-9-69.
George Gibson, et al, “Reaction of Silicon Tetrachloride With N,N-dimethylhydrazine and Hydrazin,” Inorg. Chem., 1963, p. 876-8, vol. 2(4). ABSTRACT.
S.I. Sergeeva, et al, “Synthesis of Alkyl-and dialkylbis..silanes,” Zhurnal Obshchei Khimii, 1960, p. 694-5, vol. 30(2). ABSTRACT.
M.G. Voronkov, et al, “Silyl Derivatives of Asymmetric Dimethylhydrazine as a ..,” Izvestiya Vysshikh Uchebnykh Zavedenii, 2002, p. 57-60, vol. (4) ABSTRACT.
Cuthill Kirk Scott
Hochberg Arthur Kenneth
Xiao Manchao
Air Products and Chemicals Inc.
Chase Geoffrey L.
Chen Bret
Rossi Joseph D.
LandOfFree
Precursors for depositing silicon containing films and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Precursors for depositing silicon containing films and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Precursors for depositing silicon containing films and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3676507